wuxi nce power semiconductor co., ltd page v1.0 1 NCE4606 pb free product http://www.ncepower.com n and p-channel enhancement mode power mosfet description the NCE4606 uses advanced trench technology to provide excellent r ds(on) and low gate charge . the complementary mosfets may be used to form a level shifted high side switch, and for a host of other applications. general features n-channel v ds = 30v,i d =6.5a r ds(on) < 30m ? @ v gs =10v p-channel v ds = -30v,i d = -7a r ds(on) < 33m ? @ v gs =-10v high power and current handing capability lead free product is acquired surface mount package schematic diagram marking and pin assignment sop-8 top view package marking and ordering information device marking device device package reel size tape width quantity 4606 NCE4606 sop-8 ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol n-channel p-channel unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v t a =25 6.5 -7 continuous drain current t a =70 i d 5.4 -5.8 a pulsed drain current (note 1) i dm 30 -30 a maximum power dissipation t a =25 p d 2.0 2.0 w operating junction and stor age temperature range t j ,t stg -55 to 150 -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note2) r ja n-ch 62.5 /w thermal resistance,junction-to-ambient (note2) r ja p-ch 62.5 /w n-channel p-channel
wuxi nce power semiconductor co., ltd page v1.0 2 NCE4606 pb free product http://www.ncepower.com n-ch electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 30 33 - v zero gate voltage drain current i dss v ds =30v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1 1.6 3 v drain-source on-state resistance r ds(on) v gs =10v, i d =6a - 20 30 m ? forward transconductance g fs v ds =5v,i d =6a 15 - - s dynamic characteristics (note4) input capacitance c lss - 255 - pf output capacitance c oss - 45 - pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz - 35 - pf switching characteristics (note 4) turn-on delay time t d(on) - 4.5 - ns turn-on rise time t r - 2.5 - ns turn-off delay time t d(off) - 14.5 - ns turn-off fall time t f v dd =15v, r l =2.5 ? v gs =10v,r gen =3 ? - 3.5 - ns total gate charge q g - 13 - nc gate-source charge q gs - 5.5 - nc gate-drain charge q gd v ds =15v,i d =6a, v gs =10v - 3.5 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =6a - 0.8 1.2 v
wuxi nce power semiconductor co., ltd page v1.0 3 NCE4606 pb free product http://www.ncepower.com p-ch electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250 a -30 -33 - v zero gate voltage drain current i dss v ds =-30v,v gs =0v - - -1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -1.5 -1.9 -2.5 v drain-source on-state resistance r ds(on) v gs =-10v, i d =-6.5a - 28 33 m ? forward transconductance g fs v ds =-5v,i d =-6.5a 10 - - s dynamic characteristics (note4) input capacitance c lss - 520 - pf output capacitance c oss - 100 - pf reverse transfer capacitance c rss v ds =-15v,v gs =0v, f=1.0mhz - 65 - pf switching characteristics (note 4) turn-on delay time t d(on) - 7.5 - ns turn-on rise time t r - 5.5 - ns turn-off delay time t d(off) - 19 - ns turn-off fall time t f v dd =-15v, r l =2.3 ? v gs =-10v,r gen =6 ? - 7 - ns total gate charge q g - 9.2 - nc gate-source charge q gs - 1.6 - nc gate-drain charge q gd v ds =-15v,i d =-6.5a v gs =-10v - 2.2 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-6.5a - - -1.2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 . % 4. guaranteed by design, not subject to production
wuxi nce power semiconductor co., ltd page v1.0 4 NCE4606 pb free product http://www.ncepower.com n- channel typical electrical a nd thermal characteristics (curves) vgs rgen vin g vdd rl vout s d figure 1:switching test circuit vds drain-source voltage (v) figure 3 output characteristics i d - drain current (a) figure 5 drain-source on-resistance v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms vgs gate-source voltage (v) figure 4 transfer characteristics t j -junction temperature( ) figure 6 drain-source on-resistance normalized on-resistance rdson on-resistance(m ) normalized on-resistance i d - drain current (a) i d - drain current (a)
wuxi nce power semiconductor co., ltd page v1.0 5 NCE4606 pb free product http://www.ncepower.com vgs gate-source voltage (v) figure7 rdson vs vgs qg gate charge (nc) figure 9 gate charge vds drain-source voltage (v) figure 11 capacitance vs vds t j -junction temperature( ) figure 8 power dissipation vds drain-source voltage (v) figure 10 source- drain diode forward vds drain-source voltage (v) figure 12 safe operation area i d - drain current (a) i s - reverse drain current (a) vgs gate-source voltage (v) c capacitance (pf) rdson on-resistance(m ) p d power(w)
wuxi nce power semiconductor co., ltd page v1.0 6 NCE4606 pb free product http://www.ncepower.com square wave pluse duration(sec) figure 13 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance
wuxi nce power semiconductor co., ltd page v1.0 7 NCE4606 pb free product http://www.ncepower.com p- channel typical electrical and thermal characteristics (curves) -vds drain-source voltage (v) figure 1 output characteristics -vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junction temperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance ( ? ) -i d - drain current (a) -i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a)
wuxi nce power semiconductor co., ltd page v1.0 8 NCE4606 pb free product http://www.ncepower.com c capacitance (pf) vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal impedance normalized bvdss vth (v) variance
wuxi nce power semiconductor co., ltd page v1.0 9 NCE4606 pb free product http://www.ncepower.com sop-8 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 1.350 1.750 0.053 0.069 a1 0.100 0.250 0.004 0.010 a2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 d 4.700 5.100 0.185 0.200 e 3.800 4.000 0.150 0.157 e1 5.800 6.200 0.228 0.244 e 1.270(bsc) 0.050(bsc) l 0.400 1.270 0.016 0.050 0 8 0 8
wuxi nce power semiconductor co., ltd page v1.0 10 NCE4606 pb free product http://www.ncepower.com attention any and all nce power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce power representative nearest you before us ing any nce power products described or contained herein in such applications. nce power assumes no responsibility for equipment failu res that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and al l nce power products described or contained herein. specifications of any and all nce powe r products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. strives to supply hi gh-quality high-reliability pr oducts. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce power believes information herein is accu rate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the nce power product that you intend to use. this catalog provides information as of sep.2010. specific ations and information herein are subject to change without notice.
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